Semiconductor Packages

ABSTRACT

In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.17/026,898 filed on Sep. 21, 2020, which is a divisional of U.S. patentapplication Ser. No. 15/907,869 filed on Feb. 28, 2018, now U.S. Pat.No. 10,784,203, issued on Sep. 22, 2020, which claims the benefits ofU.S. Provisional Application No. 62/586,413, filed on Nov. 15, 2017,which applications are hereby incorporated herein.

BACKGROUND

The semiconductor industry has experienced rapid growth due to ongoingimprovements in the integration density of a variety of electroniccomponents (e.g., transistors, diodes, resistors, capacitors, etc.). Forthe most part, improvement in integration density has resulted fromiterative reduction of minimum feature size, which allows morecomponents to be integrated into a given area. As the demand forshrinking electronic devices has grown, a need for smaller and morecreative packaging techniques of semiconductor dies has emerged. Anexample of such packaging systems is Package-on-Package (PoP)technology. In a PoP device, a top semiconductor package is stacked ontop of a bottom semiconductor package to provide a high level ofintegration and component density. PoP technology generally enablesproduction of semiconductor devices with enhanced functionalities andsmall footprints on a printed circuit board (PCB).

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, and 16illustrate cross-sectional views of intermediate steps during a processfor forming device packages, in accordance with some embodiments.

FIGS. 17, 18A, 18B, 18C, 19, and 20 illustrate cross-sectional views ofintermediate steps during a process for forming a package structure, inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with some embodiments, conductive connectors are formed tobond a device package to metallization patterns of a redistributionstructure. Openings are formed exposing the metallization patterns, andthe conductive connectors are formed in the openings. The conductiveconnectors are then reflowed to bond the metallization patterns to adevice package. By controlling the widths of the openings and theconductive connectors, the thickness of an IMC formed during the reflowmay be controlled. In particular, the thickness of the IMC is controlledto be less than the thickness of the metallization patterns.Delamination of underlying seed layers may thus be avoided duringsubsequent testing.

FIGS. 1 through 16 illustrate cross-sectional views of intermediatesteps during a process for forming first packages 200, in accordancewith some embodiments. A first package region 600 and a second packageregion 602 are illustrated, and a first package 200 is formed in eachpackage region. The first packages 200 may also be referred to asintegrated fan-out (InFO) packages.

In FIG. 1 , a carrier substrate 100 is provided, and a release layer 102is formed on the carrier substrate 100. The carrier substrate 100 may bea glass carrier substrate, a ceramic carrier substrate, or the like. Thecarrier substrate 100 may be a wafer, such that multiple packages can beformed on the carrier substrate 100 simultaneously. The release layer102 may be formed of a polymer-based material, which may be removedalong with the carrier substrate 100 from the overlying structures thatwill be formed in subsequent steps. In some embodiments, the releaselayer 102 is an epoxy-based thermal-release material, which loses itsadhesive property when heated, such as a light-to-heat-conversion (LTHC)release coating. In other embodiments, the release layer 102 may be anultra-violet (UV) glue, which loses its adhesive property when exposedto UV lights. The release layer 102 may be dispensed as a liquid andcured, may be a laminate film laminated onto the carrier substrate 100,or may be the like. The top surface of the release layer 102 may beleveled and may have a high degree of coplanarity.

In FIG. 2 , a dielectric layer 104, a metallization pattern 106(sometimes referred to as redistribution layers or redistributionlines), and a dielectric layer 108 are formed. The dielectric layer 104is formed on the release layer 102. The bottom surface of the dielectriclayer 104 may be in contact with the top surface of the release layer102. In some embodiments, the dielectric layer 104 is formed of apolymer, such as polybenzoxazole (PBO), polyimide, benzocyclobutene(BCB), or the like. In other embodiments, the dielectric layer 104 isformed of a nitride such as silicon nitride; an oxide such as siliconoxide, phosphosilicate glass (PSG), borosilicate glass (BSG),boron-doped phosphosilicate glass (BPSG), or the like; or the like. Thedielectric layer 104 may be formed by any acceptable deposition process,such as spin coating, chemical vapor deposition (CVD), laminating, thelike, or a combination thereof.

The metallization pattern 106 is formed on the dielectric layer 104. Asan example to form metallization pattern 106, a seed layer (not shown)is formed over the dielectric layer 104. In some embodiments, the seedlayer is a metal layer, which may be a single layer or a composite layercomprising a plurality of sub-layers formed of different materials. Insome embodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, PVD or the like. A photo resist is then formed and patterned onthe seed layer. The photo resist may be formed by spin coating or thelike and may be exposed to light for patterning. The pattern of thephoto resist corresponds to the metallization pattern 106. Thepatterning forms openings through the photo resist to expose the seedlayer. A conductive material is formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductivematerial may be formed by plating, such as electroplating or electrolessplating, or the like. The conductive material may comprise a metal, likecopper, titanium, tungsten, aluminum, or the like. Then, the photoresist and portions of the seed layer on which the conductive materialis not formed are removed. The photo resist may be removed by anacceptable ashing or stripping process, such as using an oxygen plasmaor the like. Once the photo resist is removed, exposed portions of theseed layer are removed, such as by using an acceptable etching process,such as by wet or dry etching. The remaining portions of the seed layerand conductive material form the metallization pattern 106.

The dielectric layer 108 is formed on the metallization pattern 106 andthe dielectric layer 104. In some embodiments, the dielectric layer 108is formed of a polymer, which may be a photo-sensitive material such asPBO, polyimide, BCB, or the like, that may be patterned using alithography mask. In other embodiments, the dielectric layer 108 isformed of a nitride such as silicon nitride; an oxide such as siliconoxide, PSG, BSG, BPSG; or the like. The dielectric layer 108 may beformed by spin coating, lamination, CVD, the like, or a combinationthereof. The dielectric layer 108 is then patterned to form openings 109to expose portions of the metallization pattern 106. The patterning maybe by an acceptable process, such as by exposing the dielectric layer108 to light when the dielectric layer 108 is a photo-sensitive materialor by etching using, for example, an anisotropic etch.

The dielectric layers 104 and 108 and the metallization pattern 106 maybe referred to as a back-side redistribution structure 110. In theembodiment shown, the back-side redistribution structure 110 includesthe two dielectric layers 104 and 108 and one metallization pattern 106.In other embodiments, the back-side redistribution structure 110 caninclude any number of dielectric layers, metallization patterns, andconductive vias. One or more additional metallization pattern anddielectric layer may be formed in the back-side redistribution structure110 by repeating the processes for forming the metallization pattern 106and dielectric layer 108. Conductive vias (not shown) may be formedduring the formation of a metallization pattern by forming the seedlayer and conductive material of the metallization pattern in theopening of the underlying dielectric layer. The conductive vias maytherefore interconnect and electrically couple the various metallizationpatterns.

In FIG. 3 , through vias 112 are formed. As an example to form thethrough vias 112, a seed layer 113 (shown below in FIG. 18 ) is formedover the back-side redistribution structure 110, e.g., on the dielectriclayer 108 and portions of the metallization pattern 106 exposed by theopenings 109. In some embodiments, the seed layer 113 is a metal layer,which may be a single layer or a composite layer comprising a pluralityof sub-layers formed of different materials. In some embodiments, theseed layer 113 comprises a titanium layer and a copper layer over thetitanium layer. The seed layer 113 may be formed using, for example, PVDor the like. A photo resist is formed and patterned on the seed layer113. The photo resist may be formed by spin coating or the like and maybe exposed to light for patterning. The pattern of the photo resistcorresponds to through vias. The patterning forms openings through thephoto resist to expose the seed layer 113. A conductive material isformed in the openings of the photo resist and on the exposed portionsof the seed layer 113. The conductive material may be formed by plating,such as electroplating or electroless plating, or the like. Theconductive material may comprise a metal, like copper, titanium,tungsten, aluminum, or the like. The photo resist and portions of theseed layer 113 on which the conductive material is not formed areremoved. The photo resist may be removed by an acceptable ashing orstripping process, such as using an oxygen plasma or the like. Once thephoto resist is removed, exposed portions of the seed layer 113 areremoved, such as by using an acceptable etching process, such as by wetor dry etching. The remaining portions of the seed layer 113 andconductive material form the through vias 112.

In FIG. 4 , integrated circuit dies 114 are adhered to the dielectriclayer 108 by an adhesive 116. The integrated circuit dies 114 may belogic dies (e.g., central processing unit, microcontroller, etc.),memory dies (e.g., dynamic random access memory (DRAM) die, staticrandom access memory (SRAM) die, etc.), power management dies (e.g.,power management integrated circuit (PMIC) die), radio frequency (RF)dies, sensor dies, micro-electro-mechanical-system (MEMS) dies, signalprocessing dies (e.g., digital signal processing (DSP) die), front-enddies (e.g., analog front-end (AFE) dies), the like, or a combinationthereof. Also, in some embodiments, the integrated circuit dies 114 maybe different sizes (e.g., different heights and/or surface areas), andin other embodiments, the integrated circuit dies 114 may be the samesize (e.g., same heights and/or surface areas).

Before being adhered to the dielectric layer 108, the integrated circuitdies 114 may be processed according to applicable manufacturingprocesses to form integrated circuits in the integrated circuit dies114. For example, the integrated circuit dies 114 each include asemiconductor substrate 118, such as silicon, doped or undoped, or anactive layer of a semiconductor-on-insulator (SOI) substrate. Thesemiconductor substrate may include other semiconductor materials, suchas germanium; a compound semiconductor including silicon carbide,gallium arsenic, gallium phosphide, indium phosphide, indium arsenide,and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP,AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.Other substrates, such as multi-layered or gradient substrates, may alsobe used. Devices, such as transistors, diodes, capacitors, resistors,etc., may be formed in and/or on the semiconductor substrate 118 and maybe interconnected by interconnect structures 120 formed by, for example,metallization patterns in one or more dielectric layers on thesemiconductor substrate 118 to form an integrated circuit.

The integrated circuit dies 114 further comprise pads 122, such asaluminum pads, to which external connections are made. The pads 122 areon what may be referred to as respective active sides of the integratedcircuit dies 114. Passivation films 124 are on the integrated circuitdies 114 and on portions of the pads 122. Openings are through thepassivation films 124 to the pads 122. Die connectors 126, such asconductive pillars (for example, comprising a metal such as copper), arein the openings through the passivation films 124 and are mechanicallyand electrically coupled to the respective pads 122. The die connectors126 may be formed by, for example, plating, or the like. The dieconnectors 126 electrically couple the respective integrated circuits ofthe integrated circuit dies 114.

A dielectric material 128 is on the active sides of the integratedcircuit dies 114, such as on the passivation films 124 and the dieconnectors 126. The dielectric material 128 laterally encapsulates thedie connectors 126, and the dielectric material 128 is laterallycoterminous with the respective integrated circuit dies 114. Thedielectric material 128 may be a polymer such as PBO, polyimide, BCB, orthe like; a nitride such as silicon nitride or the like; an oxide suchas silicon oxide, PSG, BSG, BPSG, or the like; the like, or acombination thereof, and may be formed, for example, by spin coating,lamination, CVD, or the like.

The adhesive 116 is on back-sides of the integrated circuit dies 114 andadheres the integrated circuit dies 114 to the back-side redistributionstructure 110, such as the dielectric layer 108. The adhesive 116 may beany suitable adhesive, epoxy, die attach film (DAF), or the like. Theadhesive 116 may be applied to a back-side of the integrated circuitdies 114, such as to a back-side of the respective semiconductor waferor may be applied over the surface of the carrier substrate 100. Theintegrated circuit dies 114 may be singulated, such as by sawing ordicing, and adhered to the dielectric layer 108 by the adhesive 116using, for example, a pick-and-place tool.

Although two integrated circuit dies 114 are illustrated as beingadhered in each of the first package region 600 and the second packageregion 602, it should be appreciated that more or less integratedcircuit dies 114 may be adhered in each package region. For example,only one integrated circuit die 114 may be adhered in each region.Further, the integrated circuit dies 114 may vary in size. In someembodiments, the integrated circuit die 114 may be dies with a largefootprint, such as system-on-chip (SoC) devices. In embodiments wherethe integrated circuit die 114 have a large footprint, the spaceavailable for the through vias 112 in the package regions may belimited. Use of the back-side redistribution structure 110 allows for animproved interconnect arrangement when the package regions have limitedspace available for the for the through vias 112.

In FIG. 5 , an encapsulant 130 is formed on the various components. Theencapsulant 130 may be a molding compound, epoxy, or the like, and maybe applied by compression molding, transfer molding, or the like. Theencapsulant 130 may be formed over the carrier substrate 100 such thatthe through vias 112 and/or the die connectors 126 of the integratedcircuit dies 114 are buried or covered. The encapsulant 130 is thencured.

In FIG. 6 , a planarization process is performed on the encapsulant 130to expose the through vias 112 and the die connectors 126. Theplanarization process may also grind the dielectric material 128. Topsurfaces of the through vias 112, die connectors 126, dielectricmaterial 128, and encapsulant 130 are coplanar after the planarizationprocess. The planarization process may be, for example, achemical-mechanical polish (CMP), a grinding process, or the like. Insome embodiments, the planarization may be omitted, for example, if thethrough vias 112 and die connectors 126 are already exposed.

In FIGS. 7 through 14 , a front-side redistribution structure 132 isformed. As will be illustrated, the front-side redistribution structure132 includes dielectric layers 134, 140, 146, and 152, and also includesmetallization patterns 138, 144, and 150. The metallization patterns mayalso be referred to as redistribution layers or redistribution lines,and include conductive vias and conductive lines (not separatelylabeled).

In FIG. 7 , the dielectric layer 134 is deposited on the encapsulant130, through vias 112, and die connectors 126. In some embodiments, thedielectric layer 134 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like, thatmay be patterned using a lithography mask. In other embodiments, thedielectric layer 134 is formed of a nitride such as silicon nitride; anoxide such as silicon oxide, PSG, BSG, BPSG; or the like. The dielectriclayer 134 may be formed by spin coating, lamination, CVD, the like, or acombination thereof.

The dielectric layer 134 is then patterned. The patterning formsopenings 136 to expose portions of the through vias 112 and the dieconnectors 126. The patterning may be by an acceptable process, such asby exposing the dielectric layer 134 to light when the dielectric layer134 is a photo-sensitive material or by etching using, for example, ananisotropic etch. If the dielectric layer 134 is a photo-sensitivematerial, the dielectric layer 134 can be developed after the exposure.

In FIG. 8 , the metallization pattern 138 with vias is formed on thedielectric layer 134. As an example to form the metallization pattern138, a seed layer (not shown) is formed over the dielectric layer 134and in the openings 136 through the dielectric layer 134. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD or the like. A photo resistis then formed and patterned on the seed layer. The photo resist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photo resist corresponds to themetallization pattern 138. The patterning forms openings through thephoto resist to expose the seed layer. A conductive material is formedin the openings of the photo resist and on the exposed portions of theseed layer. The conductive material may be formed by plating, such aselectroplating or electroless plating, or the like. The conductivematerial may comprise a metal, like copper, titanium, tungsten,aluminum, or the like. Then, the photo resist and portions of the seedlayer on which the conductive material is not formed are removed. Thephoto resist may be removed by an acceptable ashing or strippingprocess, such as using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed, suchas by using an acceptable etching process, such as by wet or dryetching. The remaining portions of the seed layer and conductivematerial form the metallization pattern 138 and vias. The vias areformed in openings 136 through the dielectric layer 134 to, e.g., thethrough vias 112 and/or the die connectors 126.

In FIG. 9 , the dielectric layer 140 is deposited on the metallizationpattern 138 and the dielectric layer 134. In some embodiments, thedielectric layer 140 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like, thatmay be patterned using a lithography mask. In other embodiments, thedielectric layer 140 is formed of a nitride such as silicon nitride; anoxide such as silicon oxide, PSG, BSG, BPSG; or the like. The dielectriclayer 140 may be formed by spin coating, lamination, CVD, the like, or acombination thereof.

The dielectric layer 140 is then patterned. The patterning formsopenings 142 to expose portions of the metallization pattern 138. Thepatterning may be by an acceptable process, such as by exposing thedielectric layer 140 to light when the dielectric layer 140 is aphoto-sensitive material or by etching using, for example, ananisotropic etch. If the dielectric layer 140 is a photo-sensitivematerial, the dielectric layer 140 can be developed after the exposure.

In FIG. 10 , the metallization pattern 144 with vias is formed on thedielectric layer 140. As an example to form the metallization pattern144, a seed layer (not shown) is formed over the dielectric layer 140and in the openings 142 through the dielectric layer 140. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD or the like. A photo resistis then formed and patterned on the seed layer. The photo resist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photo resist corresponds to themetallization pattern 144. The patterning forms openings through thephoto resist to expose the seed layer. A conductive material is formedin the openings of the photo resist and on the exposed portions of theseed layer. The conductive material may be formed by plating, such aselectroplating or electroless plating, or the like. The conductivematerial may comprise a metal, like copper, titanium, tungsten,aluminum, or the like. Then, the photo resist and portions of the seedlayer on which the conductive material is not formed are removed. Thephoto resist may be removed by an acceptable ashing or strippingprocess, such as using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed, suchas by using an acceptable etching process, such as by wet or dryetching. The remaining portions of the seed layer and conductivematerial form the metallization pattern 144 and vias. The vias areformed in the openings 142 through the dielectric layer 140 to, e.g.,portions of the metallization pattern 138.

In FIG. 11 , the dielectric layer 146 is deposited on the metallizationpattern 144 and the dielectric layer 140. In some embodiments, thedielectric layer 146 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like, thatmay be patterned using a lithography mask. In other embodiments, thedielectric layer 146 is formed of a nitride such as silicon nitride; anoxide such as silicon oxide, PSG, BSG, BPSG; or the like. The dielectriclayer 146 may be formed by spin coating, lamination, CVD, the like, or acombination thereof.

The dielectric layer 146 is then patterned. The patterning formsopenings 148 to expose portions of the metallization pattern 144. Thepatterning may be by an acceptable process, such as by exposing thedielectric layer 146 to light when the dielectric layer 146 is aphoto-sensitive material or by etching using, for example, ananisotropic etch. If the dielectric layer 146 is a photo-sensitivematerial, the dielectric layer 146 can be developed after the exposure.

In FIG. 12 , the metallization pattern 150 with vias is formed on thedielectric layer 146. As an example to form metallization pattern 150, aseed layer (not shown) is formed over the dielectric layer 146 and inthe openings 148 through the dielectric layer 146. In some embodiments,the seed layer is a metal layer, which may be a single layer or acomposite layer comprising a plurality of sub-layers formed of differentmaterials. In some embodiments, the seed layer comprises a titaniumlayer and a copper layer over the titanium layer. The seed layer may beformed using, for example, PVD or the like. A photo resist is thenformed and patterned on the seed layer. The photo resist may be formedby spin coating or the like and may be exposed to light for patterning.The pattern of the photo resist corresponds to the metallization pattern150. The patterning forms openings through the photo resist to exposethe seed layer. A conductive material is formed in the openings of thephoto resist and on the exposed portions of the seed layer. Theconductive material may be formed by plating, such as electroplating orelectroless plating, or the like. The conductive material may comprise ametal, like copper, titanium, tungsten, aluminum, or the like. Then, thephoto resist and portions of the seed layer on which the conductivematerial is not formed are removed. The photo resist may be removed byan acceptable ashing or stripping process, such as using an oxygenplasma or the like. Once the photo resist is removed, exposed portionsof the seed layer are removed, such as by using an acceptable etchingprocess, such as by wet or dry etching. The remaining portions of theseed layer and conductive material form the metallization pattern 150and vias. The vias are formed in openings through the dielectric layer146 to, e.g., portions of the metallization pattern 144.

In FIG. 13 , the dielectric layer 152 is deposited on the metallizationpattern 150 and the dielectric layer 146. In some embodiments, thedielectric layer 152 is formed of a polymer, which may be aphoto-sensitive material such as PBO, polyimide, BCB, or the like, thatmay be patterned using a lithography mask. In other embodiments, thedielectric layer 152 is formed of a nitride such as silicon nitride; anoxide such as silicon oxide, PSG, BSG, BPSG; or the like. The dielectriclayer 152 may be formed by spin coating, lamination, CVD, the like, or acombination thereof.

The dielectric layer 152 is then patterned. The patterning formsopenings 154 to expose portions of the metallization pattern 150. Thepatterning may be by an acceptable process, such as by exposing thedielectric layer 152 to light when the dielectric layer 152 is aphoto-sensitive material or by etching using, for example, ananisotropic etch. If the dielectric layer 152 is a photo-sensitivematerial, the dielectric layer 152 can be developed after the exposure.The openings 154 may be wider than the openings 136, 142, 148.

In FIG. 14 , under bump metallurgies (UBMs) 156 are formed on thedielectric layer 152. In the illustrated embodiment, the UBMs 156 areformed through the openings 154 through the dielectric layer 152 to themetallization pattern 150. As an example to form the UBMs 156, a seedlayer (not shown) is formed over the dielectric layer 152. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD or the like. A photo resistis then formed and patterned on the seed layer. The photo resist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photo resist corresponds to the UBMs 156.The patterning forms openings through the photo resist to expose theseed layer. A conductive material is formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductivematerial may be formed by plating, such as electroplating or electrolessplating, or the like. The conductive material may comprise a metal, likecopper, titanium, tungsten, aluminum, or the like. Then, the photoresist and portions of the seed layer on which the conductive materialis not formed are removed. The photo resist may be removed by anacceptable ashing or stripping process, such as using an oxygen plasmaor the like. Once the photo resist is removed, exposed portions of theseed layer are removed, such as by using an acceptable etching process,such as by wet or dry etching. The remaining portions of the seed layerand conductive material form the UBMs 156. In embodiments where the UBMs156 are formed differently, more photo resist and patterning steps maybe utilized.

The front-side redistribution structure 132 is shown as an example. Moreor fewer dielectric layers and metallization patterns may be formed inthe front-side redistribution structure 132. If fewer dielectric layersand metallization patterns are to be formed, steps and process discussedabove may be omitted. If more dielectric layers and metallizationpatterns are to be formed, steps and processes discussed above may berepeated. One having ordinary skill in the art will readily understandwhich steps and processes would be omitted or repeated.

In FIG. 15 , conductive connectors 158 are formed on the UBMs 156. Theconductive connectors 158 may be BGA connectors, solder balls, metalpillars, controlled collapse chip connection (C4) bumps, micro bumps,electroless nickel-electroless palladium-immersion gold technique(ENEPIG) formed bumps, or the like. The conductive connectors 158 mayinclude a conductive material such as solder, copper, aluminum, gold,nickel, silver, palladium, tin, the like, or a combination thereof. Insome embodiments, the conductive connectors 158 are formed by initiallyforming a layer of solder through such commonly used methods such asevaporation, electroplating, printing, solder transfer, ball placement,or the like. Once a layer of solder has been formed on the structure, areflow may be performed in order to shape the material into the desiredbump shapes. In another embodiment, the conductive connectors 158 aremetal pillars (such as a copper pillar) formed by a sputtering,printing, electro plating, electroless plating, CVD, or the like. Themetal pillars may be solder free and have substantially verticalsidewalls. In some embodiments, a metal cap layer (not shown) is formedon the top of the metal pillars. The metal cap layer may include nickel,tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold,nickel-gold, the like, or a combination thereof and may be formed by aplating process.

In FIG. 16 , a carrier substrate de-bonding is performed to detach(de-bond) the carrier substrate 100 from the back-side redistributionstructure 110, e.g., the dielectric layer 104. The first packages 200are thereby formed in each of the first package region 600 and thesecond package region 602. In accordance with some embodiments, thede-bonding includes projecting a light such as a laser light or an UVlight on the release layer 102 so that the release layer 102 decomposesunder the heat of the light and the carrier substrate 100 can beremoved. The structure is then flipped over and placed on a tape 160.Further, openings 162 are formed through the dielectric layer 104 toexpose portions of the metallization pattern 106. The openings 162 maybe formed, for example, using laser drilling, etching, or the like.

FIGS. 17 through 20 illustrate cross-sectional views of intermediatesteps during a process for forming a package structure 500, inaccordance with some embodiments. The package structure 500 may bereferred to a package-on-package (PoP) structure.

In FIG. 17 , a second package 300 is attached to the first package 200.The second package 300 includes a substrate 302 and one or more stackeddies 308 (308A and 308B) coupled to the substrate 302. Although asingular stack of dies 308 (308A and 308B) is illustrated, in otherembodiments, a plurality of stacked dies 308 (each having one or morestacked dies) may be disposed side by side coupled to a same surface ofthe substrate 302. The substrate 302 may be made of a semiconductormaterial such as silicon, germanium, diamond, or the like. In someembodiments, compound materials such as silicon germanium, siliconcarbide, gallium arsenic, indium arsenide, indium phosphide, silicongermanium carbide, gallium arsenic phosphide, gallium indium phosphide,combinations of these, and the like, may also be used. Additionally, thesubstrate 302 may be a silicon-on-insulator (SOI) substrate. Generally,an SOI substrate includes a layer of a semiconductor material such asepitaxial silicon, germanium, silicon germanium, SOI, silicon germaniumon insulator (SGOI), or combinations thereof. The substrate 302 is, inone alternative embodiment, based on an insulating core such as afiberglass reinforced resin core. One example core material isfiberglass resin such as FR4. Alternatives for the core material includebismaleimide-triazine (BT) resin, or alternatively, other printedcircuit board (PCB) materials or films. Build up films such as Ajinomotobuild-up film (ABF) or other laminates may be used for substrate 302.

The substrate 302 may include active and passive devices (not shown). Asone of ordinary skill in the art will recognize, a wide variety ofdevices such as transistors, capacitors, resistors, combinations ofthese, and the like may be used to generate the structural andfunctional requirements of the design for the second package 300. Thedevices may be formed using any suitable methods.

The substrate 302 may also include metallization layers (not shown) andthrough vias 306. The metallization layers may be formed over the activeand passive devices and are designed to connect the various devices toform functional circuitry. The metallization layers may be formed ofalternating layers of dielectric (e.g., low-k dielectric material) andconductive material (e.g., copper) with vias interconnecting the layersof conductive material and may be formed through any suitable process(such as deposition, damascene, dual damascene, or the like). In someembodiments, the substrate 302 is substantially free of active andpassive devices.

The substrate 302 may have bond pads 303 on a first side the substrate202 to couple to the stacked dies 308, and bond pads 304 on a secondside of the substrate 302, the second side being opposite the first sideof the substrate 302, to couple to the conductive connectors 314. Insome embodiments, the bond pads 303 and 304 are formed by formingrecesses (not shown) into dielectric layers (not shown) on the first andsecond sides of the substrate 302. The recesses may be formed to allowthe bond pads 303 and 304 to be embedded into the dielectric layers. Inother embodiments, the recesses are omitted as the bond pads 303 and 304may be formed on the dielectric layer. In some embodiments, the bondpads 303 and 304 include a thin seed layer (not shown) made of copper,titanium, nickel, gold, palladium, the like, or a combination thereof.The conductive material of the bond pads 303 and 304 may be depositedover the thin seed layer. The conductive material may be formed by anelectro-chemical plating process, an electroless plating process, CVD,ALD, PVD, the like, or a combination thereof. In an embodiment, theconductive material of the bond pads 303 and 304 is copper, tungsten,aluminum, silver, gold, the like, or a combination thereof.

In an embodiment, the bond pads 303 and 304 are UBMs that include threelayers of conductive materials, such as a layer of titanium, a layer ofcopper, and a layer of nickel. For example, the bond pads 304 may beformed from copper, may be formed on a layer of titanium (not shown),and have a nickel finish 305. The nickel finish 305 may improve theshelf life of the device package 300, which may be particularlyadvantageous when the device package 300 is a memory device such as aDRAM module. However, one of ordinary skill in the art will recognizethat there are many suitable arrangements of materials and layers, suchas an arrangement of chrome/chrome-copper alloy/copper/gold, anarrangement of titanium/titanium tungsten/copper, or an arrangement ofcopper/nickel/gold, that are suitable for the formation of the bond pads303 and 304. Any suitable materials or layers of material that may beused for the bond pads 303 and 304 are fully intended to be includedwithin the scope of the current application. In some embodiments, thethrough vias 306 extend through the substrate 302 and couple at leastone bond pad 303 to at least one bond pad 304.

In the illustrated embodiment, the stacked dies 308 are coupled to thesubstrate 302 by wire bonds 310, although other connections may be used,such as conductive bumps. In an embodiment, the stacked dies 308 arestacked memory dies. For example, the stacked dies 308 may be memorydies such as low-power (LP) double data rate (DDR) memory modules, suchas LPDDR1, LPDDR2, LPDDR3, LPDDR4, or the like memory modules. As notedabove, in such embodiments, the bond pads 304 may have a nickel finish305.

The stacked dies 308 and the wire bonds 310 may be encapsulated by amolding material 312. The molding material 312 may be molded on thestacked dies 308 and the wire bonds 310, for example, using compressionmolding. In some embodiments, the molding material 312 is a moldingcompound, a polymer, an epoxy, silicon oxide filler material, the like,or a combination thereof. A curing process may be performed to cure themolding material 312; the curing process may be a thermal curing, a UVcuring, the like, or a combination thereof.

In some embodiments, the stacked dies 308 and the wire bonds 310 areburied in the molding material 312, and after the curing of the moldingmaterial 312, a planarization step, such as a grinding, is performed toremove excess portions of the molding material 312 and provide asubstantially planar surface for the second package 300.

After the second package 300 is formed, the second package 300 ismechanically and electrically bonded to the first package 200 by way ofconductive connectors 314, the bond pads 304, and the metallizationpattern 106. In some embodiments, the stacked dies 308 may be coupled tothe integrated circuit dies 114 through the wire bonds 310, the bondpads 303 and 304, through vias 306, the conductive connectors 314, andthe through vias 112. FIGS. 18A through 18C are cross-sectional viewsillustrating more details of a region 650 during a process for bondingthe first package 200 and second package 300 with the conductiveconnectors 314.

In FIG. 18A, a reflowable layer 402 is formed on each of the exposedmetallization patterns 106 in the openings 162. The reflowable layer 402may be a solder layer (sometimes known as a pre-solder layer), a solderpaste, or the like. In an embodiment, the reflowable layer 402 is aCu-containing pre-solder material such as SnCu, SnAgCu, the like, orcombinations thereof, and may be printed onto the exposed metallizationpatterns 106, although other processes, such as electroplating orelectroless plating, may be utilized. The Cu concentration of thereflowable layer 402 may be from about 5% to about 10%. In someembodiments, the reflowable layer 402 completely fills or overfills theopenings 162, and in other embodiment, the reflowable layer 402 onlypartially fills the openings 162. The openings 162 are formed to a widthWi of from about 230 μm to about 260 μm, such as about 250 μm. As such,portions of the reflowable layer 402 in each opening 162 also have thewidth Wi.

In FIG. 18B, reflowable connectors 404 are formed on the reflowablelayer 402, over the back side of the back-side redistribution structure110. The reflowable connectors 404 may be similar to the conductiveconnectors 158. For example, the reflowable connectors 404 may be formedby initially forming a layer of solder through such commonly usedmethods such as evaporation, electroplating, printing, solder transfer,ball placement, or the like. Once a layer of solder has been formed onthe structure, a reflow may be performed in order to shape the materialinto the desired bump shapes. The reflowable connectors 404 containsubstantially no Cu or very little Cu. In particular, the Cuconcentration of the reflowable layer 402 is greater than the Cuconcentration of the reflowable connectors 404. After formation, thereflowable connectors 404 have a width W₂ of from about 250 μm to about320 μm, such as about 300 μm.

In some embodiments, after formation, the reflowable connectors 404 arecoated with a flux (not shown), such as a no-clean flux. The reflowableconnectors 404 may be dipped in the flux or the flux may be jetted ontothe reflow able connectors 404. In another embodiment, the flux may beapplied to the surfaces of the metallization pattern 106.

In FIG. 18C, a reflow process is performed to bond the second package300 to the first package 200 by, e.g., solder bonding. During thisreflow process, the reflowable layer 402 and reflowable connectors 404reflow to form the conductive connectors 314. After the reflow process,the reflow able layer 402 and reflowable connectors 404 may intermix andnot be distinctly visible as separate structures. During this reflowprocess, the conductive connectors 314 are in contact with the bond pads304 and the metallization pattern 106 to physically and electricallycouple the second package 300 to the first package 200. The conductiveconnectors 314 may be disposed on an opposing side of the substrate 302as the stacked dies 308, in the openings 162. After the bonding process,an intermetallic compound (IMC) (not shown) may form at the interfacebetween the conductive connectors 314 and the bond pads 304. An IMC 164also forms at the interface of the metallization pattern 106 and theconductive connectors 314. After formation, each IMC 164 has a width W₃of from about 245 μm to about 275 μm, such as about 255 μm. The width W3of the IMCs 164 is less than the width W₂ of the conductive connectors314, and may be greater than the width Wi of the openings 162.

In embodiments where the nickel finish 305 is formed on the bond pads304, the reflow process results in more Cu being consumed from themetallization pattern 106 during formation of the IMC 164. Further,substantially no Cu is consumed from the bond pads 304 due to the nickelfinish 305 acting as a blocking layer. As such, according to Fick's law,the conductive connectors 314 have a graded concentration of Cu inembodiments where the nickel finish 305 is formed. In particular, theconcentration of the Cu may decrease through the conductive connectors314 in a direction extending from the metallization pattern 106 to thenickel finish 305.

The IMC 164 is formed to a thickness T₁, and the metallization pattern106 of the back-side redistribution structure 110 is formed to athickness T₂. As noted above, the openings 162 are formed to a width W₁,and the reflowable connectors 404 are formed to a width W₂. The processconditions of forming the openings 162 and reflowable connectors 404 arecontrolled such that the ratio of the width W₂ to the width Wi is withina particular range. Controlling the ratio of the width W₂ to the widthW₁ allows the thickness T₁ of the IMC 164 to be controlled. Notably, theratio of the width W₂ to the width Wi is controlled such that thethickness T₁ is less than the thickness T₂ by a difference of thicknessT₃. In an embodiment, the thickness T₂ of the metallization pattern 106may be from about 6 μm to about 10 μm, such as about 7 μm. In suchembodiments, constraining the ratio of the width W₂ to the width W₁ toless than about 1.53 allows the thickness T₁ of the IMC 164 to be lessthan the thickness T₂ of the metallization pattern 106. For example, thethickness T₁ of the IMC 164 may be less than about 6.5 μm, such as fromabout 3 μm to about 6 μm, and the difference in thickness T₃ may begreater than about 0.5 μm, such as from about 1 μm to about 2.5 μm.

After forming the conductive connectors 314 are formed, the firstpackage 200 and second package 300 may be tested to determinereliability of the package. The testing process may subject the packagesto high levels of heat. If the IMC 164 is formed completely through themetallization pattern 106, delamination of the seed layer 113 may occurduring high-temperature testing. As such, although reliable connectionsmay be formed during reflow, the connections may subsequently failduring testing.

Because the Cu concentration of the reflowable layer 402 is greater thanthe reflowable connectors 404, and because the reflowable layer 402 isformed with a Cu concentration of from about 5% to about 10%, theresulting conductive connectors 314 may have a Cu concentration of fromabout 0.55% by weight to about 0.7% by weight, such as greater thanabout 0.5% by weight. Such a concentration allows the IMC 164 to form,but reduces the amount of Cu consumed from the metallization pattern 106during reflow. Reducing the amount of Cu consumed from the metallizationpattern 106 may allow some pure Cu to remain in portions of themetallization pattern 106, avoiding delamination of the seed layer 113during testing.

By forming the IMC 164 to have a thickness T₁ less than the thickness T₂of the metallization pattern 106, some copper remains disposed betweenthe IMC 164 and the seed layer 113 after the reflow process. Theadhesion between the seed layer 113 and metallization pattern 106 may bestronger than adhesion between the seed layer 113 and IMC 164. As such,by forming the IMC 164 such that it does not extend all the way to theseed layer 113, delamination of the seed layer 113 may be avoided orreduced during testing.

In some embodiments, a solder resist (not shown) is formed on the sideof the substrate 302 opposing the stacked dies 308. The conductiveconnectors 314 may be disposed in openings in the solder resist to beelectrically and mechanically coupled to conductive features (e.g., thebond pads 304) in the substrate 302. The solder resist may be used toprotect areas of the substrate 302 from external damage.

In some embodiments, the conductive connectors 314 have an epoxy flux(not shown) formed thereon before they are reflowed with at least someof the epoxy portion of the epoxy flux remaining after the secondpackage 300 is attached to the first package 200.

In some embodiments, an underfill (not shown) is formed between thefirst package 200 and the second package 300 and surrounding theconductive connectors 314. The underfill may reduce stress and protectthe joints resulting from the reflowing of the conductive connectors314. The underfill may be formed by a capillary flow process after thefirst package 200 is attached or may be formed by a suitable depositionmethod before the first package 200 is attached. In embodiments wherethe epoxy flux is formed, it may act as the underfill.

In FIG. 19 , a singulation process 316 is performed by sawing alongscribe line regions, e.g., between the first package region 600 and thesecond package region 602. The sawing singulates the first packageregion 600 from the second package region 602. The resulting, singulatedfirst and second packages 200 and 300 are from one of the first packageregion 600 or the second package region 602. In some embodiments, thesingulation process 316 is performed after the second package 300 isattached to the first package 200. In other embodiments (not shown), thesingulation process 316 is performed before the second package 300 isattached to the first package 200, such as after the carrier substrate100 is de-bonded and the openings 162 are formed.

In FIG. 20 , the first package 200 is mounted to a package substrate 400using the conductive connectors 158. The package substrate 400 may bemade of a semiconductor material such as silicon, germanium, diamond, orthe like. Alternatively, compound materials such as silicon germanium,silicon carbide, gallium arsenic, indium arsenide, indium phosphide,silicon germanium carbide, gallium arsenic phosphide, gallium indiumphosphide, combinations of these, and the like, may also be used.Additionally, the package substrate 400 may be a SOI substrate.Generally, an SOI substrate includes a layer of a semiconductor materialsuch as epitaxial silicon, germanium, silicon germanium, SOI, SGOI, orcombinations thereof. The package substrate 400 is, in one alternativeembodiment, based on an insulating core such as a fiberglass reinforcedresin core. One example core material is fiberglass resin such as FR4.Alternatives for the core material include bismaleimide-triazine BTresin, or alternatively, other PCB materials or films. Build up filmssuch as ABF or other laminates may be used for package substrate 400.

The package substrate 400 may include active and passive devices (notshown). As one of ordinary skill in the art will recognize, a widevariety of devices such as transistors, capacitors, resistors,combinations of these, and the like may be used to generate thestructural and functional requirements of the design for the packagestructure 500. The devices may be formed using any suitable methods.

The package substrate 400 may also include metallization layers and vias(not shown) and bond pads 402 over the metallization layers and vias.The metallization layers may be formed over the active and passivedevices and are designed to connect the various devices to formfunctional circuitry. The metallization layers may be formed ofalternating layers of dielectric (e.g., low-k dielectric material) andconductive material (e.g., copper) with vias interconnecting the layersof conductive material and may be formed through any suitable process(such as deposition, damascene, dual damascene, or the like). In someembodiments, the package substrate 400 is substantially free of activeand passive devices.

In some embodiments, the conductive connectors 158 are reflowed toattach the first package 200 to the bond pads 402. The conductiveconnectors 158 electrically and/or physically couple the packagesubstrate 400, including metallization layers in the package substrate400, to the first package 200. In some embodiments, passive devices(e.g., surface mount devices (SMDs), not illustrated) may be attached tothe first package 200 (e.g., bonded to the bond pads 402) prior tomounting on the package substrate 400. In such embodiments, the passivedevices may be bonded to a same surface of the first package 200 as theconductive connectors 158.

The conductive connectors 158 may have an epoxy flux (not shown) formedthereon before they are reflowed with at least some of the epoxy portionof the epoxy flux remaining after the first package 200 is attached tothe package substrate 400. This remaining epoxy portion may act as anunderfill to reduce stress and protect the joints resulting from thereflowing the conductive connectors 158. In some embodiments, anunderfill (not shown) may be formed between the first package 200 andthe package substrate 400 and surrounding the conductive connectors 158.The underfill may be formed by a capillary flow process after the firstpackage 200 is attached or may be formed by a suitable deposition methodbefore the first package 200 is attached.

Embodiments may achieve advantages. Controlling the ratio of the widthW₂ to the width W₁ to be less than 1.53 may allow the thickness of theIMC 164 to be controlled. Notably, by forming the IMC 164 to a thicknessless than the thickness of the metallization pattern 106, some Cu mayremain in the metallization pattern 106 between the conductiveconnectors 314 and seed layer 113. Delamination of the seed layer 113during testing may therefore be reduced or avoided.

In an embodiment, a device includes: a back-side redistributionstructure including: a metallization pattern on a first dielectriclayer; and a second dielectric layer on the metallization pattern; athrough via extending through the first dielectric layer to contact themetallization pattern; an integrated circuit die adjacent the throughvia on the first dielectric layer; a molding compound on the firstdielectric layer, the molding compound encapsulating the through via andthe integrated circuit die; a conductive connector extending through thesecond dielectric layer to contact the metallization pattern, theconductive connector being electrically connected to the through via;and an intermetallic compound at the interface of the conductiveconnector and the metallization pattern, the intermetallic compoundextending only partially into the metallization pattern.

In some embodiments, the metallization pattern has a thickness of fromabout 6 μm to about 10 μm. In some embodiments, the intermetalliccompound extends into the metallization pattern a distance of less thanabout 6.5 μm. In some embodiments, portions of the metallization patternbetween the conductive connector and the through via have a thickness ofgreater than about 0.5 μm. In some embodiments, first portions of theconductive connector extending through the second dielectric layer havea first width, second portions of the conductive connector outside thesecond dielectric layer have a second width, and the ratio of the secondwidth to the first width is less than 1.53. In some embodiments, firstportions of the conductive connector extending through the seconddielectric layer have a first width, the intermetallic compound has asecond width, and the second width is greater than the first width. Insome embodiments, the metallization pattern has a third width, and thesecond width is less than the third width.

In an embodiment, a method includes: forming a metallization patternbetween a first dielectric layer and a second dielectric layer;patterning a first opening through the first dielectric layer, the firstopening exposing a first side of the metallization pattern; depositing aseed layer in the first opening; patterning a second opening through thesecond dielectric layer, the second opening exposing a second side ofthe metallization pattern; placing a conductive connector in the secondopening on the second side of the metallization pattern; and reflowingthe conductive connector, thereby forming an intermetallic compound atthe interface of the conductive connector and the metallization pattern,the metallization pattern separating the intermetallic compound from theseed layer.

In some embodiments, the method further includes: attaching anintegrated circuit die to the first dielectric layer. In someembodiments, the method further includes: forming a molding compoundencapsulating the integrated circuit die; and plating a conductivematerial on the seed layer, the conductive material extending throughthe molding compound and at least partially into the first dielectriclayer. In some embodiments, the reflowing the conductive connector bondsa first substrate to the second side of the metallization pattern withthe conductive connector. In some embodiments, after the reflowing, theconductive connector includes solder and copper. In some embodiments,the conductive connector has a graded concentration of the copper, thegraded concentration of the copper decreasing in a direction extendingaway from the metallization pattern. In some embodiments, a firstportion of the conductive connector extending through the seconddielectric layer has a first width, a second portion of the conductiveconnector outside the second dielectric layer has a second width, andthe ratio of the second width to the first width is less than 1.53.

In an embodiment, a method includes: forming a metallization pattern ona first dielectric layer; depositing a second dielectric layer on themetallization pattern and the first dielectric layer; forming a throughvia extending through the second dielectric layer to contact a firstside of the metallization pattern; etching a first opening in the firstdielectric layer exposing a second side of the metallization pattern;printing a first reflowable material in the first opening; and forming asecond reflowable material on the first reflowable material, the firstreflowable material and the second reflowable material includingdifferent concentrations of conductive materials; and reflowing thefirst reflowable material and the second reflowable material to form aconductive connector extending through the first dielectric layer, andan intermetallic compound at the interface of the metallization patternand the conductive connector.

In some embodiments, forming the via includes: etching a second openingin the second dielectric layer exposing the first side of themetallization pattern; depositing a seed layer in the second opening;and plating a conductive material on the seed layer, the conductivematerial and the seed layer forming the via. In some embodiments, themethod further includes: attaching an integrated circuit die to thesecond dielectric layer, the integrated circuit die adjacent the via;and encapsulating the via and the integrated circuit die with a moldingcompound. In some embodiments, the method further includes: attaching asubstrate to the metallization pattern with the conductive connector. Insome embodiments, the metallization pattern has a thickness of fromabout 6 μm to about 10 μm. In some embodiments, the first opening has afirst width, the conductive connector has a second width, and the ratioof the second width to the first width is less than 1.53.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: a first dielectric layer; a second dielectric layer; a first metallization pattern between the first dielectric layer and the second dielectric layer, the first metallization pattern comprising a pure copper layer and an intermetallic compound, a thickness of the intermetallic compound being greater than a thickness of the pure copper layer; a through via extending through the first dielectric layer to contact the pure copper layer; and a reflowable connector extending through the second dielectric layer to contact the intermetallic compound, the intermetallic compound aligned with a center of the reflow able connector and a center of the pure copper layer.
 2. The device of claim 1 further comprising: an integrated circuit die adjacent the through via; a molding compound encapsulating the integrated circuit die and the through via; a third dielectric layer on the molding compound; and a second metallization pattern comprising a first via and a second via, the first via extending through the third dielectric layer to contact the through via, the second via extending through the third dielectric layer to contact a die connector of the integrated circuit die.
 3. The device of claim 1, wherein a first portion of the reflowable connector extending through the second dielectric layer has a first width, a second portion of the reflowable connector outside the second dielectric layer has a second width, and the ratio of the second width to the first width is less than 1.53.
 4. The device of claim 1, wherein a width of the intermetallic compound is less than a width of the pure copper layer.
 5. The device of claim 1, wherein a first portion of the reflowable connector extending through the second dielectric layer has a first width, and a second width of the intermetallic compound is greater than the first width.
 6. The device of claim 1 further comprising: a bond pad contacting the reflowable connector, wherein a concentration of copper in the reflowable connector decreases through the reflowable connector in a direction extending from the first metallization pattern to the bond pad.
 7. The device of claim 6, wherein the bond pad comprises nickel.
 8. A device comprising: a first package comprising: a metallization pattern comprising a pure copper layer and an intermetallic compound, a thickness of the intermetallic compound being greater than a thickness of the pure copper layer; and a through via connected to the metallization pattern, the pure copper layer disposed between the through via and the intermetallic compound; a second package comprising a bond pad, the bond pad comprising a nickel layer; and a conductive connector connecting the bond pad to the metallization pattern, the intermetallic compound disposed between the conductive connector and the pure copper layer.
 9. The device of claim 8, wherein the first package further comprises: a dielectric layer, the conductive connector extending through an opening in the dielectric layer, the opening having a first width, the conductive connector having a second width, the ratio of the second width to the first width being less than 1.53.
 10. The device of claim 8, wherein the first package further comprises: a dielectric layer, the conductive connector extending through an opening in the dielectric layer, the opening having a first width, the conductive connector having a second width, the intermetallic compound having a third width, the third width being less than the second width, the third width being greater than the first width.
 11. The device of claim 8, wherein the conductive connector comprises solder and copper, a concentration of copper in the conductive connector decreasing through the conductive connector in a direction extending from the first package to the second package.
 12. A device comprising: a first dielectric layer; a conductive layer on the first dielectric layer, the conductive layer consisting essentially of copper; a second dielectric layer on the conductive layer; a reflowable connector extending through the second dielectric layer; and an intermetallic compound between the reflowable connector and the conductive layer, the intermetallic compound having a first thickness, a first portion of the conductive layer between the intermetallic compound and the first dielectric layer having a second thickness, the second thickness less than the first thickness.
 13. The device of claim 12, wherein a second portion of the conductive layer between the second dielectric layer and the first dielectric layer has a third thickness, the third thickness greater than the second thickness.
 14. The device of claim 12 further comprising: a through via extending through the first dielectric layer to contact the conductive layer, the conductive layer disposed between the through via and the intermetallic compound.
 15. The device of claim 14, wherein the intermetallic compound is aligned with the reflowable connector.
 16. The device of claim 12, wherein a width of the intermetallic compound is less than a width of the conductive layer.
 17. The device of claim 12, wherein a first portion of the reflowable connector extending through the second dielectric layer has a first width, a second portion of the reflowable connector outside the second dielectric layer has a second width, the intermetallic compound has a third width, the third width being less than the second width, the third width being greater than the first width.
 18. The device of claim 12, wherein a first portion of the reflowable connector extending through the second dielectric layer has a first width, a second portion of the reflowable connector outside the second dielectric layer has a second width, and the ratio of the second width to the first width is less than 1.53.
 19. The device of claim 12 further comprising: a bond pad contacting the reflowable connector, the bond pad comprising nickel.
 20. The device of claim 19, wherein the reflowable connector comprises solder and copper, a concentration of copper in the reflowable connector decreasing through the reflow able connector in a direction extending from the intermetallic compound to the bond pad. 